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TIM7179-60SL MICROWAVE POWER GaAs FET

TIM7179-60SL Description

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TIM7179-60SL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 48.0dBm at 7.1GHz to 7.9GHz ･HIGH GAIN G1dB= 6.5dB at 7.1GHz to 7.9GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 36.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7179-60SL RF PERFORMANCE SPECIFICAT

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM7179-60SL-like datasheet