TIM7179-4UL Datasheet - Toshiba

TIM7179-4UL, MICROWAVE POWER GaAs FET

Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 7.1GHz to 7.9GHz ･HIGH GAIN G1dB= 9.0dB at 7.1GHz to 7.9GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7179-4UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power

TIM7179-4UL-Toshiba.pdf