Toshiba
TIM7179-4UL - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 7.1GHz to 7.9GHz ･HIGH GAIN
G1dB= 9.0dB at 7.1GHz to 7.9GHz ･HERMETICALLY SEA
Rating:
1
★
(2 votes)
