Toshiba
TIM7179-60SL - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 48.0dBm at 7.1GHz to 7.9GHz ･HIGH GAIN
G1dB= 6.5dB at 7.1GHz to 7.9GHz ･LOW INTERMODULAT
Rating:
1
★
(2 votes)
