Toshiba Semiconductor TIM7785-16UL - MICROWAVE POWER GaAs FET FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEA Rating: 1 ★ (1 votes)
Toshiba Semiconductor
Toshiba Semiconductor
Toshiba Semiconductor
