TIM7785-16UL (Toshiba Semiconductor)
MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN
G1dB= 8.5dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEA
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