Toshiba
TIM7785-30UL - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 45.0dBm at 7.7GHz to 8.5GHz ･HIGH GAIN
G1dB= 8.5dB at 7.7GHz to 8.5GHz ･LOW INTERMODULAT
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FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･H.
Toshiba
TIM7785-30UL Distributor
