Toshiba
TIM7785-35SL - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 45.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN
G1dB= 6.0dB at 7.7GHz to 8.5GHz ･LOW INTERMODULAT
(6 views)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･H.
Toshiba
TIM7785-35SL Distributor
