FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･H.
Toshiba Semiconductor
TIM7785-4UL - MICROWAVE POWER GaAs FET
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEA.
