
TIM7785-6UL - MICROWAVE POWER GaAs FET
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 38.5dBm at 7.7GHz to 8.5GHz ・HIGH GAIN
G1dB= 8.5dB at 7.7GHz to 8.5GHz ・HERMETICALLY SEA
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FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・H.
TIM7785-6UL Distributor