Toshiba
TIM7785-8SL - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 39.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN
G1dB= 6.0dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEA
Rating:
1
★
(2 votes)
