Part Number | Description | Manufacture |
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NPN PLASTIC POWER TRANSISTORS |
![]() CDIL |
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Complementary Silicon Plastic Power Transistors • ESD Ratings: Machine Model, C; 400 V Human Body Model, 3B; 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 in • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage TIP41, TIP42 VCEO 40 Vdc TIP41A, TIP |
![]() ON Semiconductor |
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Epitaxial Planar NPN Transistor Complementary to TIP32/32A/32B/32C. Pb Lead-free Production specification TIP31/31A/31B/31C TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol VCBO Parameter Collector-Base Voltage VCEO Collector-E |
![]() GME |
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highly flexible ultra-low power multiprotocol SoC • 2.4 GHz transceiver Applications • Internet of Things (IoT) • -96 dBm sensitivity in Bluetooth® low energy mode • Home automation • Supported data rates: 1 Mbps, 2 Mbps Bluetooth® low energy mode • Sensor networks • -20 to +4 dBm TX power, co |
![]() Nordic |
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340KHz Synchronous Step-Down DC/DC Converter ● High Efficiency Up to 96% ● Low Rds(on) integrated Power MOSFET ● Internal Compensation Function ● Wide Input Voltage Range: 4.5V to 23V ● Adjustable Output Voltage Range: 0.925V to 20V ● 2.5A Output Current ● Fixed 340KHz Switching Frequency ● Cur |
![]() fitipower integrated technology |
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Complementary power transistors ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier Description The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear an |
![]() STMicroelectronics |
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EPITAXIAL PLANAR PNP TRANSISTOR High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. High Collector Breakdown Voltage : VCEO=-120V(Min.) TIP127 EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage |
![]() KEC |
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1 of 8 Line Data Selector/Multiplexer to ensure that select input changes do not cause invalid output transients Features Y Advanced oxide-isolated ion-implanted Schottky TTL process Y Switching performance is guaranteed over full temperature and VCC supply range Y Pin and functional co |
![]() National Semiconductor |
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Multiple furnace disabilities Timing-IC |
![]() ETC |
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Silicon PNP Power Transistors |
![]() SavantIC |
Total 8742 results |