SavantIC Semiconductor Silicon NPN Darlington Powe.
TIP132 - Silicon NPN Darlington Power Transistors
SavantIC Semiconductor Silicon NPN Darlington Power Transistors Product Specification TIP130/131/132 DESCRIPTION ·With TO-220C package ·DARLINGTON ·.TIP132 - Power Transistors
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2..TIP132 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
® TIP132 TIP135 TIP137 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES APPLICATION s LINEAR AND SWITC.TIP132 - NPN SILICON POWER DARLINGTONS
TIP130, TIP131, TIP132 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for C.TIP132 - Silicon Power Transistors
TIP131, TIP132 (NPN), TIP137 (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching .TIP132 - PLASTIC POWER TRANSISTORS
Transys Electronics L I M I T E D www.DataSheet4U.com PLASTIC POWER TRANSISTORS TIP130 TIP131 TIP132 NPN TIP135 TIP136 TIP137 PNP TO-220 Plastic .TIP132 - Silicon NPN Darlington Power Transistors
SEMICONDUCTORS NPN TIP130 – 131 – 132 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and hous.TIP132 - Darlington Transistors
TIP131, 132, 136, 137 Darlington Transistors Features: • Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - TIP131, TIP136 = 100V (Minimu.TIP132 - PLASTIC POWER TRANSISTORS
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP130 TIP131 TIP132 NPN TIP135.TIP132 - NPN Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Low Collector-Emitter Saturation Voltage- :.TIP132G - Silicon Power Transistors
TIP131, TIP132 (NPN), TIP137 (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching .