TIP31 Datasheet | Specifications & PDF Download

SEMICONDUCTOR TIP31 (NPN) Series TIP32 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 3A/40~100V/40W FEATURES

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Silicon NPN Power Transistors Product Specification TIP31/31A/31B/31C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Susta

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TIP31C Power transistors General features ■ New enhanced series ■ High switching speed ■ hFE improved linearity ■ hFE Grouping Applications ■ Linear

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SEMICONDUCTOR TIP31 (NPN) Series TIP32 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 3A/40~100V/40W FEATURES

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Epitaxial Planar NPN Transistor FEATURES  Complementary to TIP32/32A/32B/32C. Pb Lead-free Production specification TIP31/31A/31B/31C TO-220AB M

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TIP31 TIP31A TIP31B TIP31C SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP31 series dev

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP31, A, B, C NPN TIP32, A, B,

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Silicon NPN Power Transistors Product Specification TIP31/31A/31B/31C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Susta

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Complementary Silicon Plastic Power Transistors TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG, TIP32CG (PNP) Designed for use in

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TIP31, TIP32 High Power Bipolar Transistors Features: • Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Minimum) - TIP31A, TIP32A = 100 V

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Epitaxial Planar NPN Transistor FEATURES  Complementary to TIP32/32A/32B/32C. Pb Lead-free Production specification TIP31/31A/31B/31C TO-220AB M

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TIP31/TIP31A/TIP31B/TIP31C — NPN Epitaxial Silicon Transistor TIP31/TIP31A/TIP31B/TIP31C NPN Epitaxial Silicon Transistor Features • Complementary to

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TIP31 TIP31A TIP31B TIP31C SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP31 series dev

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TIP 31 series (TIP31/31A/31B/31C) TIP31/31A/31B/31C ◎ SEMIHOW REV.A0,Oct 2007 TIP 31 series (TIP31/31A/31B/31C) TIP31/31A/31B/31C Medium Power Line

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isc Silicon NPN Power Transistors INCHANGE Semiconductor TIP31C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Vol

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isc Silicon NPN Power Transistors INCHANGE Semiconductor TIP31 DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat) = 1.2V(Max.)@IC= 3A ·Co

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TIP31A Power transistors General features ■ New enhanced series ■ High switching speed ■ hFE improved linearity Applications ■ Linear and switching i

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP31A/D Complementary Silicon Plastic Power Transistors . . . designed for use in gen

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Epitaxial Planar NPN Transistor FEATURES  Complementary to TIP32/32A/32B/32C. Pb Lead-free Production specification TIP31/31A/31B/31C TO-220AB M

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