TIP31 - High Power Bipolar Transistor

Multicomp

Datasheet Details

Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Minimum) - TIP31A, TIP32A = 100 V (Minimum) - TIP31C, TIP32C.
Collector - emitter sustaining voltage - VCE (sat) = 1.2 V (Maximum) at IC = 3 A.
Current gain - bandwidth product fT = 3 MHz (Minimum) at IC = 500 mA TO-220 Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case) Maximum Ratings Dimensions A B C D E F G H I J K L M O Characteristic Collector - emitter voltage Collector - base voltage Emitt.

📁 TIP31 Similar Datasheet

TIP31A - Epitaxial Planar NPN Transistor (GME)
TIP31AG - Complementary Silicon Plastic Power Transistors (ON Semiconductor)
TIP31B - NPN TRANSISTORS (CDIL)
TIP31BG - Complementary Silicon Plastic Power Transistors (ON Semiconductor)
TIP31C - Power Transistors (RECTRON)
TIP31CE3 - 3A NPN Epitaxial Planar Power Transistor (Cystech Electonics Corp)
Tip31cf - TRIPLE DIFFUSED NPN TRANSISTOR (KEC)
TIP31CG - Complementary Silicon Plastic Power Transistors (ON Semiconductor)

Other Datasheets by Multicomp

Published: Oct 25, 2016 |