TIPL760C Datasheet | Specifications & PDF Download

isc Silicon NPN Darlington Power Transistor FEATURES ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 550V(Min.) ·Minimum Lot-to-Lot variations for

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TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 q q q Rugged Triple-D

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