TK12A80W Datasheet | Specifications & PDF Download

iscN-Channel MOSFET Transistor TK12A80W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 450mΩ (MAX) ·Enhancement mode: Vth = 3.0 to 4.0V (VDS =

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iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK12A80W，ITK12A80W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.38Ω (typ.) ·Enhancem

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MOSFETs Silicon N-Channel MOS (DTMOS) TK12A80W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON)

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