TK17J65U Datasheet | Specifications & PDF Download

iscN-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) = 0.26Ω(MAX) ·Low leakage current: IDSS = 100 µA (max) (VDS = 650 V

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TK17J65U MOSFETs Silicon N-Channel MOS (DTMOS) TK17J65U 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source

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