TK3R1E04PL Datasheet | Specifications & PDF Download

iscN-Channel MOSFET Transistor TK3R1E04PL ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 3.1mΩ (MAX) (VGS = 10 V) ·Enhancement mode: Vth = 1.4

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MOSFETs Silicon N-channel MOS (U-MOS�-H) TK3R1E04PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers

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