MITSUBISHI THYRISTOR MODULES TM100SZ-M MEDIUM POW.
Microsemi
APTM100A13SCG - MOSFET Power Module
APTM100A13SCG Phase leg Series & SiC parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C VBUS Q1 G1.
Microsemi
APTM100A40FT1G - MOSFET Power Module
APTM100A40FT1G Phase leg MOSFET Power Module VDSS = 1000V RDSon = 400m typ @ Tj = 25°C ID = 21A @ Tc = 25°C 56 11 Q1 7 8 Q2 3 4 NTC 9 10 12 .
Mitsubishi Electric Semiconductor
TM100 - MEDIUM POWER GENERAL USE NON-INSULATED TYPE
MITSUBISHI THYRISTOR MODULES TM100SZ-M MEDIUM POWER GENERAL USE NON-INSULATED TYPE TM100SZ-M • IT (AV) • VRRM Average on-state current .
ST Microelectronics
STM1001 - Reset Circuit
Features ■ Precision monitoring of 3 V, 3.3 V, and 5 V supply voltages ■ Open drain RST output ■ 30 ms or 140 ms reset pulse width (min) ■ Low supply .
Advanced Power Technology
APTM100A18FTG - MOSFET Power Module
APTM100A18FTG Phase leg MOSFET Power Module VBUS Q1 NT C2 VDSS = 1000V RDSon = 180mΩ typ @ Tj = 25°C ID = 43A @ Tc = 25°C Application • Welding conve.
Microsemi
APTM100H45STG - MOSFET Power Module
APTM100H45STG Full bridge Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 450mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C Application .
Microsemi
APTM100H46FT3G - MOSFET Power Module
APTM100H46FT3G Full bridge MOSFET Power Module VDSS = 1000V RDSon = 460mΩ typ @ Tj = 25°C ID = 19A @ Tc = 25°C Application • Welding converters • S.
Microsemi
APTM100AM90FG - MOSFET Power Module
APTM100AM90FG Phase leg MOSFET Power Module VDSS = 1000V RDSon = 90mΩ typ @ Tj = 25°C ID = 78A @ Tc = 25°C VB US Q1 G1 OUT S1 Q2 G2 S2 0/VBUS G1 V.
Microsemi
APTM100A46FT1G - MOSFET Power Module
APTM100A46FT1G Phase leg MOSFET Power Module VDSS = 1000V RDSon = 460mΩ typ @ Tj = 25°C ID = 19A @ Tc = 25°C 56 11 Q1 7 8 Q2 3 4 NTC 9 10 12 .
Microsemi
APTM100A23SCTG - MOSFET Power Module
APTM100A23SCTG Phase leg Series & SiC parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 230mΩ typ @ Tj = 25°C ID = 36A @ Tc = 25°C VBUS NT .
Microsemi
APTM100A18FTG - MOSFET Power Module
APTM100A18FTG Phase leg MOSFET Power Module VDSS = 1000V RDSon = 180mΩ typ @ Tj = 25°C ID = 43A @ Tc = 25°C VBUS NT C2 Q1 G1 S1 Q2 OUT G2 S2 0.
Microsemi
APTM100A13SG - MOSFET Power Module
APTM100A13SG Phase leg Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C VBUS Q1 G1 OUT .
Microsemi
APTM100H35FTG - MOSFET Power Module
APTM100H35FTG Full - Bridge MOSFET Power Module VDSS = 1000V RDSon = 350mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C VBUS Q1 Q3 G1 S1 O UT1 O UT2 Q2 Q4.
Microsemi
APTM100H40FT3G - MOSFET Power Module
APTM100H40FT3G Full - Bridge MOSFET Power Module VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 21A @ Tc = 25°C 13 14 Application Q1 18 22 7 19 .
Microsemi
APTM100H45FT3G - MOSFET Power Module
APTM100H45FT3G Full - Bridge MOSFET Power Module VDSS = 1000V RDSon = 450mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C 13 14 Q1 Q3 18 22 7 19 23 8 Q2 .
Microsemi
APTM100H18FG - MOSFET Power Module
APTM100H18FG OUT1 OUT2 APTM100H18FG– Rev 1 July, 2006 Full - Bridge MOSFET Power Module VDSS = 1000V RDSon = 180mΩ typ @ Tj = 25°C ID = 43A @ Tc = .
TIANMA
TM10032ABC - LCD_Module
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TIANMA
TM10032ACBWG1 - LCD_Module
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TIANMA
TM10032ACCWG - LCD_Module
m o .c U 4 t e e h SPECIFICATION FOR LCD MODULE S a t a D . w w w Model No. TM10032ACCWG m o .c U 4 t e e h S a t a .D w w w Prepared by: Checked by .
TIANMA
tm10032a-g - LCD_Module
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