TP44110HB (Tagore)
650V GaN Half-Bridge
TP44110HB
TP44110HB – 650 V GaN Half-Bridge, 90 mΩ (LS) and 90 mΩ (HS)
1.0 Features
• 650 V enhancement mode power HEMTs • RDSON: 90 mΩ (Low-side) a
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TP44110HB TP44110HB – 650 V GaN Half-Bridge, 90.
650V GaN Half-Bridge
TP44110HB Distributor
