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TP44110HB - 650V GaN Half-Bridge

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Datasheet Details

Part number	TP44110HB
Manufacturer	Tagore
File Size	1.05 MB
Description	650V GaN Half-Bridge
Datasheet	TP44110HB-Tagore.pdf

TP44110HB Product details

Description

The TP44110HB is a half-bridge IC consisting of two 650 V GaN HEMT power devices.

Features

650 V enhancement mode power HEMTs.
RDSON: 90 mΩ (Low-side) and 90 mΩ (High-side).
IDS: 19 A (max) / IDSpulse: 30 A (max).
Adjustable turn-on/off speed.
Reverse conduction capability.
Zero reverse-recovery loss.
High switching frequency capability.
Interfaces with 6 V and ≥12 V drivers (see.

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Published: Dec 4, 2024 |