TP44110HB Datasheet - Tagore

TP44110HB 650V GaN Half-Bridge

The TP44110HB is a half-bridge IC consisting of two 650 V GaN HEMT power devices. The low-side (LS) and the high-side (HS) devices are of 90 mΩ each. This co-packaged solution minimizes inductance in the power loop enabling clean switching even at high-current high-frequency operations. As provided.

TP44110HB Features

* 650 V enhancement mode power HEMTs

* RDSON: 90 mΩ (Low-side) and 90 mΩ (High-side)

* IDS: 19 A (max) / IDSpulse: 30 A (max)

* Adjustable turn-on/off speed

* Reverse conduction capability

* Zero reverse-recovery loss

* High switching frequency

TP44110HB Datasheet (1.05 MB)

TP44110HB Datasheet Preview — Preview of TP44110HB PDF

Datasheet Details

Part number:

TP44110HB

Manufacturer:

Tagore

File Size:

1.05 MB

Description:

650v gan half-bridge.

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TAGS

TP44110HB 650V GaN Half-Bridge Tagore

TP44110HB Distributor