Datasheet4U Logo Datasheet4U.com

TP44200NM Datasheet - Tagore

650V GaN HEMT

TP44200NM Features

* 650 V enhancement mode HEMT with integrated driver

* RDSON: 180 mΩ

* IDS: 10 A (max) / IDSpulse: 15 A (max)

* 5 V PWM input

* UVLO protection

* Zero reverse recovery

* Low quiescent current driver

* Adjustable turn-on slew rate

TP44200NM General Description

The TP44200NM is a 180 mΩ, 650 V GaN HEMT device with integrated driver circuit. The monolithic integration of driver minimizes inductance in the gate loop enabling safe and clean switching even at high-voltage high-frequency operations. This device makes the applications more efficient and reliable.

TP44200NM Datasheet (1.02 MB)

Preview of TP44200NM PDF

Datasheet Details

Part number:

TP44200NM

Manufacturer:

Tagore

File Size:

1.02 MB

Description:

650v gan hemt.

📁 Related Datasheet

TP44200SG 650V GaN HEMT (Tagore)

TP44100NM 650V GaN HEMT (Tagore)

TP44100SG 650V GaN HEMT (Tagore)

TP44110HB 650V GaN Half-Bridge (Tagore)

TP44400NM 650V GaN HEMT (Tagore)

TP44400SG 650V GaN HEMT (Tagore)

TP4054 Standalone Linear Li-lon Battery Charger (NanJing Top Power)

TP4055 500mA Linear Li-Ion Battery Charger (NanJing Top Power)

TP4055C 30mA-600mA linear lithium-ion battery charger (ChipSourceTek)

TP4056 1A linear lithium-ion battery charger (UMW)

TAGS

TP44200NM 650V GaN HEMT Tagore

Image Gallery

TP44200NM Datasheet Preview Page 2 TP44200NM Datasheet Preview Page 3

TP44200NM Distributor