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TP44200NM 650V GaN HEMT

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Description

TP44200NM TP44200NM * 180 mΩ, 650 V GaN HEMT with Integrated Driver and Protection 1.0 .
The TP44200NM is a 180 mΩ, 650 V GaN HEMT device with integrated driver circuit.

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Datasheet Specifications

Part number
TP44200NM
Manufacturer
Tagore
File Size
1.02 MB
Datasheet
TP44200NM-Tagore.pdf
Description
650V GaN HEMT

Features

* 650 V enhancement mode HEMT with integrated driver
* RDSON: 180 mΩ
* IDS: 10 A (max) / IDSpulse: 15 A (max)
* 5 V PWM input
* UVLO protection
* Zero reverse recovery
* Low quiescent current driver
* Adjustable turn-on slew rate

Applications

* As switching FETs in singles, or in pairs as half-bridges
* AC-DC, DC-DC, DC-AC converters
* PFC applications (totem-pole and standard)
* High frequency LLC converters
* Mobile chargers and laptop adapters
* LED and motor drives
* Server powe

TP44200NM Distributors

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