TP44100NM - 650V GaN HEMT
The TP44100NM is a 90mΩ, 650V GaN HEMT device with integrated driver circuit.
The monolithic integration of driver minimizes inductance in the gate loop enabling safe and clean switching even at high-voltage high-frequency operations.
This device makes the applications more efficient/reliable, and a
TP44100NM Features
* 650V enhancement mode HEMT with integrated driver
* 90mΩ RDSON
* 5V PWM input
* UVLO protection
* Zero reverse recovery
* Low quiescent current driver
* Adjustable turn-on slew rate
* Dv/Dt immunity both with/without driver-supply
