TSCDT20065G1 Taiwan Semiconductor 20A, 650V SiC M.
Taiwan Semiconductor
TSCDT20065G1 - 650V SiC Merged PIN Schottky Diode
TSCDT20065G1 Taiwan Semiconductor 20A, 650V SiC Merged PIN Schottky Diode FEATURES ● Max junction temperature 175°C ● MPS structure for high ruggedn.
