TTD1409B Datasheet, Features, Application
TTD1409B NPN Transistor
INCHANGE Semiconductor isc Silicon NPN Darlington.
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TTD1409B - NPN Transistor
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor TTD1409B DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 400V(Min.
1.0
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