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TTD1409B Datasheet - INCHANGE

TTD1409B NPN Transistor

*Collector *Emitter Breakdown Voltage * : V(BR)CEO = 400V(Min) *High DC Current Gain * : hFE = 600(Min) @ IC= 2A *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use high-vo.

TTD1409B-INCHANGE.pdf

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Datasheet Details

Part number:

TTD1409B

Manufacturer:

INCHANGE

File Size:

197.82 KB

Description:

Npn transistor.

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TTD1409B TTD1409B NPN Transistor INCHANGE

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