TTD1415 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC.

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Datasheet Specifications

Part number: TTD1415
Manufacturer: INCHANGE
File Size: 186.75 KB
Datasheet: TTD1415-INCHANGE.pdf
Description: NPN Transistor

Applications

* High power switching applications
* Hammer driver,pulse motor driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuo

TTD1415 Distributors

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NPN Transistor INCHANGE

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