TTD1415 Datasheet - INCHANGE

TTD1415, NPN Transistor

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC.

datasheet Preview Page 1 from Datasheet4u.com

TTD1415-INCHANGE.pdf

TTD1415 Datasheet Preview — Preview of TTD1415 PDF

Datasheet Details

Part number:

TTD1415

Manufacturer:

INCHANGE

File Size:

186.75 KB

Description:

NPN Transistor

Applications

* High power switching applications
* Hammer driver,pulse motor driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuo

TTD1415 Distributors

📁 Related Datasheet

TTD1415B TTD115N08A TTD120N03AT TTD135N68A TTD18P10AT TTD70N07A

📌 All Tags

TTD1415 NPN Transistor INCHANGE

INCHANGE TTD1415-like datasheet

TTD1410

TTD1409B