Datasheet4U Logo Datasheet4U.com

TTD1415 Datasheet - INCHANGE

TTD1415 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A *High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V *Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS.

TTD1415-INCHANGE.pdf

Preview of TTD1415 PDF
TTD1415 Datasheet Preview Page 2

Datasheet Details

Part number:

TTD1415

Manufacturer:

INCHANGE

File Size:

186.75 KB

Description:

Npn transistor.

📁 Related Datasheet

TTD1410 NPN Transistor (INCHANGE)

TTD1415B Silicon NPN Transistor (Toshiba)

TTD1415B Silicon NPN Power Transistor (Inchange)

TTD1409B NPN Transistor (INCHANGE)

TTD115N08A 85V N-Channel Trench MOSFET (Unigroup)

TTD120N03AT 30V N-Channel MOSFET (Unigroup)

TTD135N68A 68V N-Channel Trench MOSFET (Unigroup)

TTD18P10AT 100V P-Channel Trench MOSFET (Unigroup)

TAGS

TTD1415 TTD1415 NPN Transistor INCHANGE

TTD1415 Distributor