TTD1415B - Silicon NPN Transistor
TTD1415B Features
* (1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 1.5 V (max) (IC = 3 A , IB = 6 mA) (3) Complementary to TTB1020B 3. Packaging and Internal Circuit TO-220SIS 1. Base 2. Collector 3. Emitter ©2015 Toshiba Corporation 1 Star
