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TTD1415B Datasheet - Toshiba

TTD1415B Silicon NPN Transistor

TTD1415B Features

* (1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 1.5 V (max) (IC = 3 A , IB = 6 mA) (3) Complementary to TTB1020B 3. Packaging and Internal Circuit TO-220SIS 1. Base 2. Collector 3. Emitter ©2015 Toshiba Corporation 1 Star

TTD1415B-Toshiba.pdf

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Datasheet Details

Part number:

TTD1415B

Manufacturer:

Toshiba ↗

File Size:

181.73 KB

Description:

Silicon npn transistor.

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TTD1415B TTD1415B Silicon NPN Transistor Toshiba

TTD1415B Distributor