* (1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 1.5 V (max) (IC = 3 A , IB = 6 mA) (3) Complementary to TTB1020B 3. Packaging and Internal Circuit TO-220SIS 1. Base 2. Collector 3. Emitter ©2015 Toshiba Corporation 1 Star
TTD1415B Datasheet (181.73 KB)
TTD1415B
181.73 KB
Silicon npn transistor.
Bipolar Transistors Silicon NPN Triple-Diffused Type
TTD1415B
TTD1415B
1. Applications
* High-Power Switching
* Hammer Drivers
2. Fe.
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