TTD1415B Datasheet, Transistor, Toshiba

TTD1415B Features

• Transistor (1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 1.5 V (max) (IC = 3 A , IB = 6 mA) (3) Complementary to TTB1020

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Part number:

TTD1415B

Manufacturer:

Toshiba ↗

File Size:

181.73kb

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📄 Datasheet

Description:

Silicon npn transistor.

TTD1415B Application

• Applications
• High-Power Switching
• Hammer Drivers 2. Features (1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2

TAGS

TTD1415B

Toshiba

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