TTD120N03AT Datasheet, Mosfet, Unigroup

TTD120N03AT Features

  • Mosfet
  • Trench Power MOSFET Technology
  • Low RDS(ON)
  • Low Gate Charge
  • Optimized For Fast-switching Applications APPLICATIONS
  • Synchronous Rectifica

PDF File Details

Part number:

TTD120N03AT

Manufacturer:

Unigroup

File Size:

449.91kb

Download:

📄 Datasheet

Description:

30v n-channel mosfet.

Datasheet Preview: TTD120N03AT 📥 Download PDF (449.91kb)
Page 2 of TTD120N03AT Page 3 of TTD120N03AT

TTD120N03AT Application

  • Applications APPLICATIONS
  • Synchronous Rectification in DC/DC and AC/DC Converters
  • Isolated DC/DC Converters in Telecom and Indus

TAGS

TTD120N03AT
30V
N-Channel
MOSFET
Unigroup

📁 Related Datasheet

TTD115N08A - 85V N-Channel Trench MOSFET (Unigroup)
TTD115N08A Wuxi Unigroup Microelectronics CO.,LTD. 85V N-Channel Trench MOSFET General Description Product Summary  Trench Power technology  Low.

TTD135N68A - 68V N-Channel Trench MOSFET (Unigroup)
TTD135N68A Wuxi Unigroup Microelectronics CO.,LTD. 68V N-Channel Trench MOSFET(Preliminary) General Description Product Summary  Trench Power tec.

TTD1409B - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor TTD1409B DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 400V(Min.

TTD1410 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) ·Collector-Emitter Saturation V.

TTD1415 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Vol.

TTD1415B - Silicon NPN Transistor (Toshiba)
Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1415B TTD1415B 1. Applications • High-Power Switching • Hammer Drivers 2. Features (1) High .

TTD1415B - Silicon NPN Power Transistor (Inchange)
isc Silicon NPN Darlington Power Transistor TTD1415B DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 3A ·Low Collector-Emitter Saturation .

TTD18P10AT - 100V P-Channel Trench MOSFET (Unigroup)
TTD18P10AT,TTP18P10AT Wuxi Unigroup Microelectronics CO.,LTD. 100V P-Channel Trench MOSFET(Preliminary) General Description Product Summary  Tren.

TTD70N07A - N-Channel Trench MOSFET (Unigroup)
TTD70N07A, TTP70N07A Wuxi Unigroup Microelectronics CO.,LTD. 70V N-Channel Trench MOSFET Features  Trench Power Technology  Low RDS(ON)  Low Gate .

TTD70P04AT - 40V P-Channel Trench MOSFET (Unigroup)
TTD70P04AT Wuxi Unigroup Microelectronics CO.,LTD. 40V P-Channel Trench MOSFET(Preliminary) General Description Product Summary  Trench Power tec.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts