The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TTD80N04AT, TTP80N04AT Wuxi Unigroup Microelectronics Company
40V N-Channel Trench MOSFET
FEATURES
Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications
APPLICATIONS
Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial
Device Marking and Package Information
Device
Package
TTD80N04AT
TO-252
TTP80N04AT
TO-220
Marking 80N04AT 80N04AT
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Value
TO-252
TO-220
Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range
(note1) (note2)