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TTD18P10AT - 100V P-Channel Trench MOSFET

General Description

Product Summary Trench Power technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications VDS ID (at VGS =-10V) RDS(ON) (at VGS =-10V) RDS(ON) (at VGS =-4.5V) -100V -18A < 96mΩ < 108mΩ Applications Synchronous Rectification in DC/DC and AC/DC Co

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Datasheet Details

Part number TTD18P10AT
Manufacturer Unigroup
File Size 722.71 KB
Description 100V P-Channel Trench MOSFET
Datasheet download datasheet TTD18P10AT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TTD18P10AT,TTP18P10AT Wuxi Unigroup Microelectronics CO.,LTD. 100V P-Channel Trench MOSFET(Preliminary) General Description Product Summary  Trench Power technology  Low RDS(ON)  Low Gate Charge  Optimized for fast-switching applications VDS ID (at VGS =-10V) RDS(ON) (at VGS =-10V) RDS(ON) (at VGS =-4.