The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TTD115N08A Wuxi Unigroup Microelectronics CO.,LTD.
85V N-Channel Trench MOSFET
General Description
Product Summary
Trench Power technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications
VDS ID (at VGS =10V) RDS(ON) (at VGS =10V)
85V 115A < 8.5mΩ
Applications
Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
TO-252
Part Number TTD115N08A
Package Type TO-252
Form Tape & Reel
Absolute Maximum Ratings (TA =25ºC unless otherwise noted)
Parameter
Symbol
Maximum
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current B
TC =25ºC TC =100ºC
ID
Pulsed Drain Current A
IDM
Avalanche Current A
IAS
Single Pulse Avalanche Energy L =0.