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TTD135N68A Wuxi Unigroup Microelectronics CO.,LTD.
68V N-Channel Trench MOSFET(Preliminary)
General Description
Product Summary
Trench Power technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications
VDS ID (at VGS =10V) RDS(ON) (at VGS =10V)
68V 135A < 5.0mΩ
Applications
Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
TO-252
Part Number TTD135N68A
Package Type TO-252
Form Tape&Reel
Absolute Maximum Ratings (TA =25ºC unless otherwise noted)
Parameter
Symbol
Maximum
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current A Avalanche Current A
TC =25ºC TC =100ºC
Single Pulse Avalanche Energy L =0.