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TTD1409B - NPN Transistor

General Description

Collector Emitter Breakdown Voltage : V(BR)CEO = 400V(Min) High DC Current Gain : hFE = 600(Min) @ IC= 2A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use high-vo

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor TTD1409B DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 400V(Min) ·High DC Current Gain— : hFE = 600(Min) @ IC= 2A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use high-voltage switching applications.