TTD1410 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min). Collector-Emitter Saturation Voltage- :V CE(sat)= 2. High D.

📥 Download Datasheet

TTD1410 Datasheet Preview — Preview of TTD1410 PDF

Datasheet Specifications

Part number: TTD1410
Manufacturer: INCHANGE
File Size: 187.65 KB
Datasheet: TTD1410-INCHANGE.pdf
Description: NPN Transistor

Applications

* Igniter applications
* High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Curr

TTD1410 Distributors

📁 Related Datasheet

TTD1415B - Silicon NPN Transistor (Toshiba)
TTD115N08A - 85V N-Channel Trench MOSFET (Unigroup)
TTD120N03AT - 30V N-Channel MOSFET (Unigroup)
TTD135N68A - 68V N-Channel Trench MOSFET (Unigroup)
TTD18P10AT - 100V P-Channel Trench MOSFET (Unigroup)
TTD70N07A - N-Channel Trench MOSFET (Unigroup)

📌 All Tags

NPN Transistor INCHANGE

INCHANGE TTD1410-like datasheet

TTD1415 - NPN Transistor
TTD1409B - NPN Transistor