TXDV812 Datasheet | Specifications & PDF Download

isc Thyristors INCHANGE Semiconductor TXDV812 DESCRIPTION ·With TO-220 packaging ·High operating junction temperature ·Very high commutation perform

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Features ■ On-state current (IT(RMS)): 12 A ■ Max. blocking voltage (VDRM/VRRM): 1200 V ■ Gate current (IGT): 100 mA ■ Commutation @ 10 V/µs: up to 42

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