Tagore Datasheet | Specifications & PDF Download

TS86246P – SPDT 200W Average Power Switch HF Band 1 – 30 MHz TS86246P 1.0 Features • Low insertion loss: 0.08dB @ 1 MHz • High isolation: 58 dB @ 1

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TA9210D TA9210D – 12.5W CW, 30 - 4000MHz GaN Power Transistor 1.0 Features ● Small signal gain @ 800MHz: 18dB ● Large signal gain @ 800MHz: 13.5dB ●

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TS8423K TS8423K – 20 W GaN Broadband RF Switch SPDT 1.0 Features  Low insertion loss: 0.2dB @ 800MHz  High isolation: 45dB @ 800MHz  High CW power

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TS86436P – SP4T 200W Average Power Switch 30 MHz to 1 GHz TS86436P 1.0 Features • Low insertion loss: 0.09dB @ 30 MHz • High isolation: 70 dB @ 30 M

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TS8541L - 50W CW GaN Broadband RF Switch SP4T 1.0 Features ● Low insertion loss: 0.25dB @ 800MHz ● High isolation: 45dB @ 800MHz ● High linear power h

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TS7225FK TS7225FK - 10W CW GaN Broadband RF Switch SPDT 1.0 Features ● Low insertion loss: 0.35dB @ 800MHz ● High isolation: 45dB @ 800MHz ● High pe

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TS7224FK TS7224FK - 50W Peak Power GaN Broadband RF Switch SPDT 1.0 Features ● Low insertion loss: 0.35dB @ 800MHz ● High isolation: 45dB @ 800MHz ●

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TS72250K - 10W CW GaN Broadband RF Switch SPDT TS72250K 1.0 Features ● Low insertion loss: 0.35dB @ 800MHz ● High isolation: 45dB @ 800MHz ● High pe

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TS7242FK TS7242FK - 10W CW GaN Broadband RF Switch SP4T 1.0 Features ● Low insertion loss: 0.45dB @ 800MHz ● High isolation: 40dB @ 800MHz ● High li

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Preliminary TL0302H TL0302H: 5.925 – 7.125 GHz High Gain Ultra Low Noise Amplifier 1.0 Features ● Small signal gain @ 6.6 GHz: 13.6 dB ● NF @ 6.6 G

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TS8043N - 100W CW, Broadband SP4T GaN RF Switch 1.0 Features  Low insertion loss: 0.37dB @ 1GHz  High isolation: 45dB @ 400MHz, 36dB @ 1GHz  100W C

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TP44200NM TP44200NM – 180 mΩ, 650 V GaN HEMT with Integrated Driver and Protection 1.0 Features • 650 V enhancement mode HEMT with integrated driver

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TL0374J TL0374J: 0.03 – 3.0 GHz GaAs Ultra Low Noise Amplifier 1.0 Features ● Small signal gain @ 1800 MHz: 21.5 dB ● NF @ 1800 MHz: 0.35 dB ● OP1dB

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TSL8029N TSL8029N: Single channel 2 – 5GHz 100Watt Receiver Front End for MACRO base station 1.0 Features Integrated single-channel RF front end 2-st

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TP44100SG SUPERIOR GaN TP44100SG – 90 mΩ, 650 V GaN HEMT 1.0 Features • 650 V e-mode power HEMT • RDSON: 90 mΩ • IDS: 19 A (max) / IDSpulse: 30 A (m

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TP44200SG SUPERIOR GaN TP44200SG – 180 mΩ, 650 V GaN HEMT 1.0 Features • 650 V e-mode power HEMT • RDSON: 180 mΩ • IDS: 10 A (max) / IDSpulse: 15 A

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TS7421L TS7421L - 30W CW GaN Broadband RF Switch SPDT 1.0 Features ● Low insertion loss: 0.30dB @ 800MHz ● High isolation: 44dB @ 800MHz ● High line

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TS8023N - 100W CW, Broadband SPDT GaN RF Switch TS8023N 1.0 Features  Low insertion loss: 0.5dB @ 4GHz  High isolation: 42dB @ 1.0GHz, 27dB @ 3.5G

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TS64210L TS64210L – 1.6Ω ON Resistance GaN Broadband RF Switch SP2T 1.0 Features ● Low 1.6Ω on resistance ● 0.40pF Coff ● RF peak voltage handling of

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Preliminary Specification TS7529N 50W CW, 316W Peak SPDT FEATURES • Low insertion loss (TX Path) o 0.65dB @ 2.7GHz • High isolation (RX Path) o 45dB

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