.
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TL0374J - Ultra Low Noise Amplifier
TL0374J TL0374J: 0.03 – 3.0 GHz GaAs Ultra Low Noise Amplifier 1.0 Features ● Small signal gain @ 1800 MHz: 21.5 dB ● NF @ 1800 MHz: 0.35 dB ● OP1dB.
Tagore
TP44200SG - 650V GaN HEMT
TP44200SG SUPERIOR GaN TP44200SG – 180 mΩ, 650 V GaN HEMT 1.0 Features • 650 V e-mode power HEMT • RDSON: 180 mΩ • IDS: 10 A (max) / IDSpulse: 15 A .
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TA9410E - GaN Power Transistor
TA9410E TA9410E – 25W CW, 50V, 20 - 3000MHz GaN Power Transistor 1.0 Features ● Small signal gain @ 1000MHz: 20dB ● Gain at P3dB @ 1000MHz: 17dB ● P.
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TS8728N - 400W 20% Duty Cycle 2.0ms Pulse Width Peak GaN RF Switch
TS8728N TS8728N - 400W 20% Duty Cycle 2.0ms Pulse Width Peak GaN RF Switch 1.0 Features ● Switching Time: 0.75s ● Low TX insertion loss: 0.39dB @ 35.
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TS84230K - 20W GaN Broadband RF Switch
TS84230K TS84230K – 20 W GaN Broadband RF Switch SPDT, charge pump disabled. 1.0 Features Low insertion loss: 0.2dB @ 800MHz High isolation: 45.
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TA9210D - GaN Power Transistor
TA9210D TA9210D – 12.5W CW, 30 - 4000MHz GaN Power Transistor 1.0 Features ● Small signal gain @ 800MHz: 18dB ● Large signal gain @ 800MHz: 13.5dB ●.
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TS63210K - On Resistance GaN Broadband RF Switch
TS63210K TS63210K – 1.4Ω On Resistance GaN Broadband RF Switch SP2T 1.0 Features ● Ultra low 1.4Ω on resistance ● 0.40pF Coff ● RF peak voltage handl.
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TR0329M - Ultra Low Noise 2 Stage Bypassed LNA
Preliminary TR0329M TR0329M: 2.0 – 4.2 GHz Ultra Low Noise 2 Stage Bypassed LNA 1.0 Features ● Small signal gain @ 3600MHz: 34dB (High Gain mode) @.
Tagore
TL0375J - Ultra Low Noise Amplifier
TL0375J TL0375J: 2.0 – 5.0 GHz GaAs Ultra Low Noise Amplifier 1.0 Features ● Small signal gain @ 3600 MHz: 17.5 dB ● NF @ 3600 MHz: 0.4 dB ● OP1dB @.
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TP44110HB - 650V GaN Half-Bridge
TP44110HB TP44110HB – 650 V GaN Half-Bridge, 90 mΩ (LS) and 90 mΩ (HS) 1.0 Features • 650 V enhancement mode power HEMTs • RDSON: 90 mΩ (Low-side) a.
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TS7224FK - 50W Peak Power GaN Broadband RF Switch
TS7224FK TS7224FK - 50W Peak Power GaN Broadband RF Switch SPDT 1.0 Features ● Low insertion loss: 0.35dB @ 800MHz ● High isolation: 45dB @ 800MHz ●.
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TS72250K - RF Switch SPDT
TS72250K - 10W CW GaN Broadband RF Switch SPDT TS72250K 1.0 Features ● Low insertion loss: 0.35dB @ 800MHz ● High isolation: 45dB @ 800MHz ● High pe.
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TS7242FK - RF Switch SPDT
TS7242FK TS7242FK - 10W CW GaN Broadband RF Switch SP4T 1.0 Features ● Low insertion loss: 0.45dB @ 800MHz ● High isolation: 40dB @ 800MHz ● High li.
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TL0302H - High Gain Ultra Low Noise Amplifier
Preliminary TL0302H TL0302H: 5.925 – 7.125 GHz High Gain Ultra Low Noise Amplifier 1.0 Features ● Small signal gain @ 6.6 GHz: 13.6 dB ● NF @ 6.6 G.
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TS8043N - Broadband SP4T GaN RF Switch
TS8043N - 100W CW, Broadband SP4T GaN RF Switch 1.0 Features Low insertion loss: 0.37dB @ 1GHz High isolation: 45dB @ 400MHz, 36dB @ 1GHz 100W C.
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TS8423K - GaN Broadband RF Switch SPDT
TS8423K TS8423K – 20 W GaN Broadband RF Switch SPDT 1.0 Features Low insertion loss: 0.2dB @ 800MHz High isolation: 45dB @ 800MHz High CW power.
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TP44200NM - 650V GaN HEMT
TP44200NM TP44200NM – 180 mΩ, 650 V GaN HEMT with Integrated Driver and Protection 1.0 Features • 650 V enhancement mode HEMT with integrated driver.
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TSL8029N - 100Watt Receiver Front End
TSL8029N TSL8029N: Single channel 2 – 5GHz 100Watt Receiver Front End for MACRO base station 1.0 Features Integrated single-channel RF front end 2-st.
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TP44100SG - 650V GaN HEMT
TP44100SG SUPERIOR GaN TP44100SG – 90 mΩ, 650 V GaN HEMT 1.0 Features • 650 V e-mode power HEMT • RDSON: 90 mΩ • IDS: 19 A (max) / IDSpulse: 30 A (m.
Tagore
TS7421L - 30W CW GaN Broadband RF Switch SPDT
TS7421L TS7421L - 30W CW GaN Broadband RF Switch SPDT 1.0 Features ● Low insertion loss: 0.30dB @ 800MHz ● High isolation: 44dB @ 800MHz ● High line.