Tagore Datasheet | Specifications & PDF Download

TS8541L - 50W CW GaN Broadband RF Switch SP4T 1.0 Features ● Low insertion loss: 0.25dB @ 800MHz ● High isolation: 45dB @ 800MHz ● High linear power h

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TS8329K TS8329K - 100W Asymmetric Peak Power GaN Broadband SPDT Switch 1.0 Features ● Low insertion loss (TX/RX): 0.4/0.5dB @ 3000MHz ● High isolati

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TSL8029N TSL8029N: Single channel 2 – 5GHz 100Watt Receiver Front End for MACRO base station 1.0 Features Integrated single-channel RF front end 2-st

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TP44100SG SUPERIOR GaN TP44100SG – 90 mΩ, 650 V GaN HEMT 1.0 Features • 650 V e-mode power HEMT • RDSON: 90 mΩ • IDS: 19 A (max) / IDSpulse: 30 A (m

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TP44200SG SUPERIOR GaN TP44200SG – 180 mΩ, 650 V GaN HEMT 1.0 Features • 650 V e-mode power HEMT • RDSON: 180 mΩ • IDS: 10 A (max) / IDSpulse: 15 A

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TA9110K TA9110K – 6W CW, 30 - 4000MHz GaN Power Transistor 1.0 Features ● Small signal gain @ 1000MHz: 17dB ● Large signal gain @ 1000MHz: 14dB ● PS

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Preliminary TR0329M TR0329M: 2.0 – 4.2 GHz Ultra Low Noise 2 Stage Bypassed LNA 1.0 Features ● Small signal gain @ 3600MHz: 34dB (High Gain mode) @

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TP44110HB TP44110HB – 650 V GaN Half-Bridge, 90 mΩ (LS) and 90 mΩ (HS) 1.0 Features • 650 V enhancement mode power HEMTs • RDSON: 90 mΩ (Low-side) a

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TS8423K TS8423K – 20 W GaN Broadband RF Switch SPDT 1.0 Features  Low insertion loss: 0.2dB @ 800MHz  High isolation: 45dB @ 800MHz  High CW power

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TS8728N TS8728N - 400W 20% Duty Cycle 2.0ms Pulse Width Peak GaN RF Switch 1.0 Features ● Switching Time: 0.75s ● Low TX insertion loss: 0.39dB @ 35

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TS7246K TS7246K - 10W CW GaN Broadband RF Switch SP4T 1.0 Features ● Low insertion loss: 0.45dB @ 800MHz ● High isolation: 40dB @ 800MHz ● High line

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TS63210K TS63210K – 1.4Ω On Resistance GaN Broadband RF Switch SP2T 1.0 Features ● Ultra low 1.4Ω on resistance ● 0.40pF Coff ● RF peak voltage handl

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TS7224FK TS7224FK - 50W Peak Power GaN Broadband RF Switch SPDT 1.0 Features ● Low insertion loss: 0.35dB @ 800MHz ● High isolation: 45dB @ 800MHz ●

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TS8043N - 100W CW, Broadband SP4T GaN RF Switch 1.0 Features  Low insertion loss: 0.37dB @ 1GHz  High isolation: 45dB @ 400MHz, 36dB @ 1GHz  100W C

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TS8023N - 100W CW, Broadband SPDT GaN RF Switch TS8023N 1.0 Features  Low insertion loss: 0.5dB @ 4GHz  High isolation: 42dB @ 1.0GHz, 27dB @ 3.5G

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TA9410E TA9410E – 25W CW, 50V, 20 - 3000MHz GaN Power Transistor 1.0 Features ● Small signal gain @ 1000MHz: 20dB ● Gain at P3dB @ 1000MHz: 17dB ● P

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TS86246P – SPDT 200W Average Power Switch HF Band 1 – 30 MHz TS86246P 1.0 Features • Low insertion loss: 0.08dB @ 1 MHz • High isolation: 58 dB @ 1

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TP44400NM TP44400NM – 360mΩ, 650V GaN HEMT With Integrated Driver and Protection 1.0 Features • 650V enhancement mode HEMT with integrated driver •

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TS7225FK TS7225FK - 10W CW GaN Broadband RF Switch SPDT 1.0 Features ● Low insertion loss: 0.35dB @ 800MHz ● High isolation: 45dB @ 800MHz ● High pe

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TS82420FK TS82420FK - 10W CW, Broadband SPDT GaN RF Switch 1.0 Features ● Low insertion loss: 0.2 @ 800MHz ● Low insertion loss: 0.3 @ 2700MHz ● Hig

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