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TA9310E (Tagore)

GaN Power Transistor

TA9310E TA9310E – 20W CW, 500 - 4000MHz GaN Power Transistor 1.0 Features ● Small signal gain @ 900MHz: 17.5dB ● Large signal gain @ 900MHz: 14.0dB
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TA9110K (Tagore)

GaN Power Transistor

TA9110K TA9110K – 6W CW, 30 - 4000MHz GaN Power Transistor 1.0 Features ● Small signal gain @ 1000MHz: 17dB ● Large signal gain @ 1000MHz: 14dB ● PS
(2 views)

TS72250K (Tagore)

RF Switch SPDT

TS72250K - 10W CW GaN Broadband RF Switch SPDT TS72250K 1.0 Features ● Low insertion loss: 0.35dB @ 800MHz ● High isolation: 45dB @ 800MHz ● High pe
(1 views)

TS7242FK (Tagore)

RF Switch SPDT

TS7242FK TS7242FK - 10W CW GaN Broadband RF Switch SP4T 1.0 Features ● Low insertion loss: 0.45dB @ 800MHz ● High isolation: 40dB @ 800MHz ● High li
(1 views)

TP44200NM (Tagore)

650V GaN HEMT

TP44200NM TP44200NM – 180 mΩ, 650 V GaN HEMT with Integrated Driver and Protection 1.0 Features • 650 V enhancement mode HEMT with integrated driver
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TP44100SG (Tagore)

650V GaN HEMT

TP44100SG SUPERIOR GaN TP44100SG – 90 mΩ, 650 V GaN HEMT 1.0 Features • 650 V e-mode power HEMT • RDSON: 90 mΩ • IDS: 19 A (max) / IDSpulse: 30 A (m
(1 views)

TP44200SG (Tagore)

650V GaN HEMT

TP44200SG SUPERIOR GaN TP44200SG – 180 mΩ, 650 V GaN HEMT 1.0 Features • 650 V e-mode power HEMT • RDSON: 180 mΩ • IDS: 10 A (max) / IDSpulse: 15 A
(1 views)

TS7529N (Tagore)

316W Peak SPDT

Preliminary Specification TS7529N 50W CW, 316W Peak SPDT FEATURES • Low insertion loss (TX Path) o 0.65dB @ 2.7GHz • High isolation (RX Path) o 45dB
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