EL519 (ETC)
High Performance Beam Power Tetrode
Svetlana EL509 / EL519 / 6KG6 High Performance Beam Power Tetrode
The Svetlana EL509 is a beam power tetrode intended for use in class A, AB or B audi
(70 views)
Russian 6P3S, 6P3S-E = 6n3C, 6n3C-E General Tetrode, used in output stages of low frequency amplifiers. Envelope: glass, with octal base. Mass 70 g. L
(62 views)
KT88
max 52,0
max 110,0 max 125,0
Base: OCTAL Uf = 6,3 V If = 1,6 A
Typical Characteristics:
Ua = 250
U = 250 g2
I = 140 a
I = max. 7 g2
Ug1
(62 views)
(49 views)
BF961 (Vishay Telefunken)
N-Channel Dual Gate MOS-Fieldeffect Tetrode
BF961
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Observe precautions for handling.
(46 views)
BF963 (Siemens)
Silicon N-Channel MOSFET Tetrode
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(37 views)
BF998 (Vishay Telefunken)
N-Channel Dual Gate MOS-Fieldeffect Tetrode
BF998/BF998R/BF998RW
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Observe precaution
(31 views)
KT77 (Genalex)
Beam Tetrode
(30 views)
PCL81 (RFT)
Triode - Endtetrode
(28 views)
BF964 (Vishay Telefunken)
N-Channel Dual Gate MOS-Fieldeffect Tetrode
BF964S
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Observe precautions for handling
(28 views)
(27 views)
EL509 (Svetlana)
High Performance Beam Power Tetrode
SVETLANA TECHNICAL DATA
EL509/6KG6
High Performance Beam Power
Tetrode
T he Svetlana EL509/6KG6 is a beam power tetrode intended for use in class A,
(25 views)
ECL11 (RFT)
Triode - Endtetrode
(23 views)
ECL11 (TELEFUNKEN)
Triode - Endtetrode
page 1 2 3 4 5 6 7
ECL11
sheet 010342-a 010342-b 020342-a 020342-b 030342-a 030342-b FP
date 1942 1942 1942 1942 1942 1942 2000.03.05
(23 views)
BF1005SW (Infineon Technologies AG)
Silicon N-Channel MOSFET Tetrode
BF1005S
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasin
(23 views)
BF1012W (Siemens Semiconductor Group)
Silicon N-Channel MOSFET Tetrode
(23 views)
Russian 6P3S, 6P3S-E = 6n3C, 6n3C-E General Tetrode, used in output stages of low frequency amplifiers. Envelope: glass, with octal base. Mass 70 g. L
(23 views)
BF1005 (Siemens Semiconductor Group)
Silicon N-Channel MOSFET Tetrode
BF 1005
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized
(22 views)
BF1005S (Infineon Technologies AG)
Silicon N-Channel MOSFET Tetrode
Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled input stages up to 1 GHz
• Operating voltage 5 V • Integrated biasing network •
(22 views)
BF960 (Vishay Telefunken)
N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its R
(22 views)
