Tri-EL Datasheet | Specifications & PDF Download

Z01 Datasheet Standard 1 A Triacs A2 G A1 A2 A1 A2 G SOT-223 A1 G A2 TO-92 A2 A1 G SMBflat-3L Features • On-state rms current, IT(RMS) 1 A • Re

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 Description: Logic level sensitive gate triac intended to interfaced directly to microcontrollers,logic integrated circuits and other low power gate

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T1610, T1635, T1650 BTA16, BTB16 Datasheet Snubberless™, logic level and standard 16 A Triacs A2 G A1 A2 TO-220AB G A2 A1 A2 G A1 A2 TO-220AB Ins.

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AON6978 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (S

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STR-W6252D www.DataSheet4U.com 60 W-Universal Input/40 W-230 Vac Input PWM Switching Regulators Features and Benefits ▪ Overcurrent protection (OCP)

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Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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ESAD83-004 (30A) (40V / 30A ) SCHOTTKY BARRIER DIODE Features Low VF Super high speed switching High reliability by planer design Outline drawings,

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Z01 Datasheet Standard 1 A Triacs A2 G A1 A2 A1 A2 G SOT-223 A1 G A2 TO-92 A2 A1 G SMBflat-3L Features • On-state rms current, IT(RMS) 1 A • Re

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TGPF30N43P Features: • 430V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

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T1610, T1635, T1650 BTA16, BTB16 Datasheet Snubberless™, logic level and standard 16 A Triacs A2 G A1 A2 TO-220AB G A2 A1 A2 G A1 A2 TO-220AB Ins.

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Off-Line PWM Controllers with Integrated Power MOSFET STR-A6000 Series Data Sheet General Descriptions The STR-A6000 series are power ICs for switch

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

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http://www.fujielectric.com/products/semiconductor/ 6MBP15VSC060-50 IGBT Modules IGBT MODULE (V series) 600V / 15A / IPM Features Low-side IGBTs a

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BTA12, BTB12, T12xx 12 A Snubberless™, logic level and standard Triacs Datasheet - production data Features  Medium current Triac  Low thermal re

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AON7934 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS •

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T4 series 4 A Triacs $ * $ $ Datasheet  production data . Table 1. Main characteristics Symbol Value Unit IT(rms) 4 A VDRM, VRRM 60

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Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

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Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel

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AOE6936 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capab

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AON6992 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capabi

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