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3N210 - N-CHANNEL DUAL GATE MOS FIELD EFFECTTRANSISTORS
3N209 (SILICON) 3N210 N·CHANNEL DUAL·GATE SILlCON·NITRIDE PASSIVATED MOS FIELD·EFFECT TRANSISTORS · .. depletion mode dual gate transistors designed .BDX53F - Complementary Silicon Power Darlington Ttransistors
TIGER ELECTRONIC CO.,LTD Complementary Silicon Power Darlington Ttransistors Product specification BDX53F / BDX54F DESCRIPTION The BDX53F are silic.2SD288 - Silicon NPN Power Ttransistors
TIGER ELECTRONIC CO.,LTD Silicon NPN Power Ttransistors Product specification 2SD288 APPLICATIONS .Low frequency power amplifier .Power regulator a.2SD401A - Complementary Silicon Power Ttransistors
TIGER ELECTRONIC CO.,LTD Product specification Complementary Silicon Power Ttransistors ( Ta = 25 C) DESCRIPTION O 2SB546A / 2SD401A The 2SB546A an.BDX54F - Complementary Silicon Power Darlington Ttransistors
TIGER ELECTRONIC CO.,LTD Complementary Silicon Power Darlington Ttransistors Product specification BDX53F / BDX54F DESCRIPTION The BDX53F are silic.IRFF9220 - HEXFETTRANSISTORS
PD - 90553C REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number IRFF9220 BVDSS -200V RDS(on) .MJE2955T - Complementary Silicon Power Ttransistors
TIGER ELECTRONIC CO.,LTD E Product specification Complementary Silicon Power Ttransistors MJE3055T / MJE2955T DESCRIPTION It is intented for use in.MJE3055T - Complementary Silicon Power Ttransistors
TIGER ELECTRONIC CO.,LTD E Product specification Complementary Silicon Power Ttransistors MJE3055T / MJE2955T DESCRIPTION It is intented for use in.