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3N210 Datasheet - ETC

3N210 N-CHANNEL DUAL GATE MOS FIELD EFFECTTRANSISTORS

3N209 (SILICON) 3N210 N CHANNEL DUAL GATE SILlCON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS .. depletion mode dual gate transistors designed and characterized for UHF communications applications Two Packages OfferedHermetic Metal TO 72 - 3N209 Micro-H Plastic - 3N21 0 Silicon Nitride Passivation for Excellent Long Term Stability Zener Diode Protected Gates Third Order Intermodulation Distortion Curve Provided Com.

3N210-ETC.pdf

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Datasheet Details

Part number:

3N210

Manufacturer:

ETC

File Size:

720.37 KB

Description:

N-channel dual gate mos field effecttransistors.

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3N210 3N210 N-CHANNEL DUAL GATE MOS FIELD EFFECTTRANSISTORS ETC

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