U231 Datasheet | Specifications & PDF Download

8/2014 B87 U231, U232, U233, U234, U235 N-Channel Matched Dual Silicon Junction Field-Effect Transistor · Differential Amplifier Absolute maximum

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20V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adva

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20V P-Channel MOSFETs PDEU2319X General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology

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20V P-Channel MOSFETs PDEU2319Y General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology

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20V P-Channel MOSFETs PDEU2319Z General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology

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monolithic dual n-channel JFETs designed for • • • • Differential Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-Source Voltage ______

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CRMLTU2312C N-Channel 20V, 16mΩ Typ. Power MOSFET Description Features l 20V, 6.5A D RDS(ON) Typ = 16mΩ @ VGS = 4.5V RDS(ON) Typ = 20mΩ @ VGS = 2.

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