UF630 Datasheet | Specifications & PDF Download

CEDF630/CEUF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 7.8A, RDS(ON) = 360mΩ @VGS = 10V. Super high dense cell design for

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UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power M

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UNISONIC TECHNOLOGIES CO., LTD UF630-HC 9.3A, 200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF630-HC is a N-channel enhancement MOSFET using UTC’s

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