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CEUF630

N-Channel Enhancement Mode Field Effect Transistor

CEUF630 Features

* 200V, 7.8A, RDS(ON) = 360mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D S CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 2

CEUF630 Datasheet (97.79 KB)

Preview of CEUF630 PDF

Datasheet Details

Part number:

CEUF630

Manufacturer:

Chino-Excel Technology

File Size:

97.79 KB

Description:

N-channel enhancement mode field effect transistor.

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TAGS

CEUF630 N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology

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