CEUF630 Features
* 200V, 7.8A, RDS(ON) = 360mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D S CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 2
CEUF630_Chino-ExcelTechnology.pdf
Datasheet Details
CEUF630, CEUF630_Chino
Chino-Excel Technology
97.79 KB
N-channel enhancement mode field effect transistor.
This datasheet PDF includes multiple part numbers: CEUF630, CEUF630_Chino.
Please refer to the document for exact specifications by model.
CEUF630 Distributor
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