CEUF630, CEUF630_Chino N-Channel Enhancement Mode Field Effect Transistor

Chino-Excel Technology

Description

CEDF630/CEUF630 N-Channel Enhancement Mode Field Effect Transistor .

📥 Download Datasheet

CEUF630 Datasheet Preview — This datasheet PDF includes multiple part numbers: CEUF630, CEUF630_Chino. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: CEUF630, CEUF630_Chino
Manufacturer: Chino-Excel Technology
File Size: 97.79 KB
Datasheet: CEUF630_Chino-ExcelTechnology.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor
Note: This datasheet PDF includes multiple part numbers: CEUF630, CEUF630_Chino.
Please refer to the document for exact specifications by model.

Features

* 200V, 7.8A, RDS(ON) = 360mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D S CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 2

CEUF630 Distributors

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CEUF630_Chino N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology

Chino-Excel Technology CEUF630-like datasheet