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CEUF640, CEUF640_Chino Datasheet - Chino-Excel Technology

CEUF640 N-Channel Enhancement Mode Field Effect Transistor

CEUF640 Features

* 200V, 15A, RDS(ON) = 0.15 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25

CEUF640_Chino-ExcelTechnology.pdf

This datasheet PDF includes multiple part numbers: CEUF640, CEUF640_Chino. Please refer to the document for exact specifications by model.
CEUF640 Datasheet Preview Page 2 CEUF640 Datasheet Preview Page 3

Datasheet Details

Part number:

CEUF640, CEUF640_Chino

Manufacturer:

Chino-Excel Technology

File Size:

365.56 KB

Description:

N-channel enhancement mode field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: CEUF640, CEUF640_Chino.
Please refer to the document for exact specifications by model.

CEUF640 Distributor

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TAGS

CEUF640 CEUF640_Chino N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology