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CEUF640

N-Channel Enhancement Mode Field Effect Transistor

CEUF640 Features

* 200V, 15A, RDS(ON) = 0.15 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25

CEUF640 Datasheet (365.56 KB)

Preview of CEUF640 PDF

Datasheet Details

Part number:

CEUF640

Manufacturer:

Chino-Excel Technology

File Size:

365.56 KB

Description:

N-channel enhancement mode field effect transistor.

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CEUF640 N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology

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