UFB Datasheet | Specifications & PDF Download

DMN2991UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ VGS = 1.8V ID

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DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 460mΩ @ VGS= 4.5V 30V 560mΩ @ VGS= 2.5V ID TA = 25°C 0.9A 0.7A Fe

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Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.

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www.vishay.com VS-UFB201FA40 Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A SOT-227 PRODUCT SUMMARY VR IF(AV) per module at TC

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DMP31D0UFB4 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -30V Max RDS(ON) 1 @ VGS = -4.5V 1.5 @ VGS = -2.5V 2 @ VGS = -1.8V Max

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DMN2990UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ VGS = 1.8V ID M

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DMN21D2UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT ADVANCE INFORMATION ADVANCE INFORMATION V(BR)DSS RDS(ON) max 0.99Ω @ VGS

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DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 5Ω @ VGS = -4.5V 7Ω @ VGS = -2.5V 10Ω @ VGS = -1.8V 15Ω @ VGS = -1.5V

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www.vishay.com VS-UFB130FA40 Vishay Semiconductors Insulated Ultrafast Rectifier Module, 130 A SOT-227 PRODUCT SUMMARY VR IF(AV) per module at TC

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ADVANCE INFORMATION DMN2501UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 0.4Ω @ VGS = 4.5V 0.5 Ω @ VGS = 2.5V 0.

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www.DataSheet4U.com 200 V - 1,000 V Single Phase Bridge 3.0 A Forward Current 70 ns - 3000 ns Recovery Time 1202B - 1210B 1202FB - 1210FB 1202UFB -

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A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 495mΩ @ VGS = -4.5V -20V 69

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www.vishay.com VS-UFB130FA20 Vishay Semiconductors Insulated Ultrafast Rectifier Module, 130 A SOT-227 PRODUCT SUMMARY VR IF(AV) per module at TC

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www.vishay.com VS-UFB170FA60 Vishay Semiconductors Insulated Ultrafast Rectifier Module, 170 A SOT-227 PRODUCT SUMMARY VR IF(AV) per module at TC

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Product Summary V(BR)DSS 20V RDS(on) 320mΩ @ VGS= 4.5V 500mΩ @ VGS= 2.5V 1000mΩ @ VGS= 1.8V ID max TA = +25°C 1.0A 0.65A 0.4A Description and Appl

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Product Summary V(BR)DSS 20V RDS(ON) max 0.55Ω @ VGS = 4.5V 0.75Ω @ VGS = 2.5V ID max TA = +25°C 0.75A 0.63A Description and Applications This MOS

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Product Summary BVDSS 20V RDS(ON) 175m @ VGS = 4.5V 240m @ VGS = 2.5V 360m @ VGS = 1.8V 500m @ VGS = 1.5V ID TA = +25°C (Note 5) 1.30A 1.11A 0.

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DMP57D5UFB P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • Low On-Resistan

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DMN2600UFB 25V N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Fast Switching Speed Ultra-Sma

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www.DataSheet4U.com 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1102B - 1110B 1102FB - 1110FB 11

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