www.DataSheet4U.com .
VMI
1110UFB - (1110xB) Single Phase Bridge
www.DataSheet4U.com 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1102B - 1110B 1102FB - 1110FB 11.
VMI
1102UFB - (1102xB - 1110xB) Single Phase Bridge
www.DataSheet4U.com 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1102B - 1110B 1102FB - 1110FB 11.
VMI
1106UFB - (1102xB - 1110xB) Single Phase Bridge
www.DataSheet4U.com 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1102B - 1110B 1102FB - 1110FB 11.
VMI
1202UFB - (1202xB - 1210xB) Single Phase Bridge
www.DataSheet4U.com 200 V - 1,000 V Single Phase Bridge 3.0 A Forward Current 70 ns - 3000 ns Recovery Time 1202B - 1210B 1202FB - 1210FB 1202UFB - .
VMI
1206UFB - (1202xB - 1210xB) Single Phase Bridge
www.DataSheet4U.com 200 V - 1,000 V Single Phase Bridge 3.0 A Forward Current 70 ns - 3000 ns Recovery Time 1202B - 1210B 1202FB - 1210FB 1202UFB - .
VMI
1210UFB - (1210xB) Single Phase Bridge
www.DataSheet4U.com 200 V - 1,000 V Single Phase Bridge 3.0 A Forward Current 70 ns - 3000 ns Recovery Time 1202B - 1210B 1202FB - 1210FB 1202UFB - .
International Rectifier
UFB200FA40 - Insulated Ultrafast Rectifier Module
www.DataSheet4U.com Bulletin PD-20486 rev. C 10/02 UFB200FA40 Insulated Ultrafast Rectifier Module Features • • • • • • • • • • Two Fully Independen.
VMI
3402UFB - (3402xB - 3410xB) Three Phase Bridge
www.DataSheet4U.com 200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time 3402B - 3410B 3402FB - 3410FB 3.
Vishay Siliconix
UFB200FA40P - Insulated Ultrafast Rectifier Module
www.DataSheet.co.kr UFB200FA40P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A FEATURES • Two fully independent diodes • Ceramic .
Diodes
DMN2250UFB - N-Channel MOSFET
A D VNAENWC EP IRNOFDOURCMTA T I O N DMN2250UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 0.17Ω @ VGS = 4.5V 0.23.
Diodes
DMN2400UFB - N-CHANNEL MOSFET
Product Summary V(BR)DSS 20V RDS(ON) max 0.55Ω @ VGS = 4.5V 0.75Ω @ VGS = 2.5V ID max TA = +25°C 0.75A 0.63A Description and Applications This MOS.
MORNSUN
UFB2424MP-6W - DC-DC CONVERTER
w w w . D a t a S h e e t . c o . k r UFA_MP-6W & UFB_MP-6W Series 6W, WIDE INPUT, ISOLATED & REGULATED DUAL & SINGLE OUTPUT, DC-DC.
Vishay Siliconix
UFB80FA20 - Insulated Ultrafast Rectifier Module
www.DataSheet.co.kr VS-UFB80FA20 Vishay Semiconductors Insulated Ultrafast Rectifier Module, 80 A FEATURES • Two fully independent diodes • Fully in.
Diodes
DMN2500UFB4 - N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2500UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) max 0.4Ω @ VGS = 4.5V ID TA = 25°C 1A 0.8A Features and Benefits • • .
Diodes
DMN2600UFB - 25V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2600UFB 25V N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Fast Switching Speed Ultra-Sma.
Diodes
DMN26D0UFB4 - N-CHANNEL ENHANCEMENT MODE MOSFET
DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 3.0Ω @ VGS = 4.5V 20V 6.0Ω @ VGS = 1.8V ID TA = 25°C 240mA 170mA Feat.
Diodes
DMP210DUFB4 - P-Channel MOSFET
DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 5Ω @ VGS = -4.5V 7Ω @ VGS = -2.5V 10Ω @ VGS = -1.8V 15Ω @ VGS = -1.5V .
Vishay
VS-UFB80FA20 - Insulated Ultrafast Rectifier Module
www.vishay.com VS-UFB80FA20 Vishay Semiconductors Insulated Ultrafast Rectifier Module, 80 A SOT-227 PRODUCT SUMMARY VR IF(AV) per module at TC = .
Vishay
VS-UFB80FA40 - Insulated Ultrafast Rectifier Module
www.vishay.com VS-UFB80FA40 Vishay Semiconductors Insulated Ultrafast Rectifier Module, 80 A SOT-227 PRODUCT SUMMARY VR IF(AV) per module at TC = .
Vishay
VS-UFB80FA60 - Insulated Ultrafast Rectifier Module
www.vishay.com VS-UFB80FA60 Vishay Semiconductors Insulated Ultrafast Rectifier Module, 80 A SOT-227 PRODUCT SUMMARY VR IF(AV) per module at TC = .
