UHF-Band Datasheet | Specifications & PDF Download

NEC'S 7.5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET FEATURES • HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, Pout = 40.5

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NTE10 Silicon NPN Transistor UHF Low Noise Wide–Band Amplifier Features: D Low Noise Figure: NF = 2.2dB Typ (f = 0.9GHz) D High Power Gain: MAG = 14dB

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OPERATION GUIDE UHF Narrow band radio data module CDP-TX/RX-02F-R 434 MHz Operation Guide Version 1.6 (Feb. 2014) OG_CDP-02F-R_v16e CIRCUIT DESIGN,

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MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Two devices are incorporated in

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OPERATION GUIDE UHF Narrow band radio data module CDP-TX/RX-02N 434 MHz/458MHz Operation Guide Version 1.6 (September 2003) OG_CDP-02N_v16e CIRCUIT

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www.DataSheet4U.com MT6L53S Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L53S VHF-UHF Band Low Noise Amplifier Application

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OPERATION GUIDE UHF Narrow band radio data module CDP-TX/RX-02F-R 434 MHz Operation Guide Version 1.6 (Feb. 2014) OG_CDP-02F-R_v16e CIRCUIT DESIGN,

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CDP-TX-02N/ CDP-RX-02N The unique and compact CDP-02N is a frequency selectable radio data module for 434MHz UHF band. Both CDP-TX-02N (transmitter) a

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MT6L72FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L72FS VHF~UHF Band Low-Noise Amplifier Applications Two devices are incorporated in

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR951 UHF wideband transistor Product specification Supersedes data of 1998 Jun 09 File un

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MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Two devices are incorporated in

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR941B UHF wideband transistor Preliminary specification 2001 Jan 18 Philips Semiconducto

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MT6L56E Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L56E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscilla

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