logo

VB20120C-E3 Datasheet, Features, Application

VB20120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3 .

Vishay
rating-1 5

VB20120C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts