VB20120C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	VB20120C-E3
Manufacturer	Vishay ↗
File Size	204.14 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB20120C-E3-Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 TO-263AB K TO-262AA.

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Published: Apr 29, 2016 |