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VB20120C-E3 Datasheet - Vishay

VB20120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

VB20120C-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Low thermal resistance

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder bath temperature 275 °C max

VB20120C-E3 Datasheet (204.14 KB)

Preview of VB20120C-E3 PDF
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Datasheet Details

Part number:

VB20120C-E3

Manufacturer:

Vishay ↗

File Size:

204.14 KB

Description:

Dual high voltage trench mos barrier schottky rectifier.

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VB20120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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