* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max
VB20120C-E3 Datasheet (204.14 KB)
VB20120C-E3
204.14 KB
Dual high voltage trench mos barrier schottky rectifier.
V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifi.
📁 Related Datasheet
VB20120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20120S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20120S-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20120SG High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20120SG-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20120SG-M3 High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20100S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
